A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
- 1 February 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (2B) , L212-213
- https://doi.org/10.1143/jjap.37.l212
Abstract
A novel delayed flip-flop circuit using monostable-bistable transition logic elements (MOBILEs) was proposed, and was fabricated using resonant-tunneling-diode/high-electron-mobility-transistor integration technology on an InP substrate. Error free operations at up to 12.5 Gb/s were demonstrated at room temperature.Keywords
This publication has 6 references indexed in Scilit:
- Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuitsSolid-State Electronics, 1996
- An exclusive-nor based on resonant interband tunneling FET'sIEEE Electron Device Letters, 1996
- InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devicesIEEE Electron Device Letters, 1996
- Compact multiple-valued multiplexers using negative differential resistance devicesIEEE Journal of Solid-State Circuits, 1996
- Reset-set flipflop based on a novel approach ofmodulatingresonant-tunnelling current with FET gatesElectronics Letters, 1994
- Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminalsIEEE Transactions on Electron Devices, 1994