An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substrates
- 15 June 1993
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (12) , 8662-8664
- https://doi.org/10.1063/1.353353
Abstract
An explanation of the interfacet migration behavior observed in molecular beam epitaxical growth of GaAs and AlGaAs on patterned GaAs(100) substrates is presented on the basis of the nature of the ledge–ledge interaction.This publication has 13 references indexed in Scilit:
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