Electron transport in rubrene single-crystal transistors
- 3 May 2010
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 96 (18) , 183304
- https://doi.org/10.1063/1.3419899
Abstract
We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to is achieved by performing multiple purifications of single crystals and device aging inside an -filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.
Keywords
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