Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe1−xTex alloys grown by molecular beam epitaxy

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Abstract
We report a systematic study of the optoelectronic properties of ZnSe1−xTex alloys grown by molecular beam epitaxy over the entire range of compositions. The band‐gap energy as a function of the composition presents a minimum at x≂0.65. The main luminescence emission observed at 5 K becomes narrower and closer to the band‐gap energy as we increase the Te content. The linewidth and the difference between the emission peak and band‐gap energy decrease significantly with increasing x and present a break in the slope at x≂0.65.