Monte Carlo simulation of hot-carrier transport in real semiconductor devices

This publication has 19 references indexed in Scilit:

• Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
  IEEE Electron Device Letters, 1988
• Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
  Physical Review B, 1988
• Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K
  IEEE Electron Device Letters, 1988
• Real space transfer: Generalized approach to transport in confined geometries
  Solid-State Electronics, 1988
• Hot-carrier simulation for MOSFETs using a high-speed Monte Carlo method
  IEEE Transactions on Electron Devices, 1988
• Performance of a quarter-micrometer-gate ballistic electron HEMT
  IEEE Electron Device Letters, 1987
• Effect of electron-electron and electron-plasmon interactions on hot carrier transport in semiconductors
  Physica B+C, 1985
• Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
  Physical Review B, 1976
• Effects of band non-parabolicity on electron drift velocity in silicon above room temperature
  Journal of Physics and Chemistry of Solids, 1975
• Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures
  Physical Review B, 1966