Memory switching in polycrystalline silicon films
- 1 March 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 66 (2) , 171-176
- https://doi.org/10.1016/0040-6090(80)90219-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Crystallization of amorphous Si films formed by chemical vapor depositionJournal of Vacuum Science and Technology, 1977
- Structures of Si Films Chemically Vapor-Deposited on Amorphous SiO2SubstratesJapanese Journal of Applied Physics, 1975
- Polarity-dependent memory switching in devices with SnSe and SnSe2 crystalsApplied Physics Letters, 1974
- Irreversible switching of conductivity states in ZnTe/Ge heterojunctionsSolid-State Electronics, 1973
- Amorphous semiconductors for switching, memory, and imaging applicationsIEEE Transactions on Electron Devices, 1973
- Bistable Switching in Metal-Semiconductor JunctionsApplied Physics Letters, 1972
- Electronic conduction in amorphous semiconductors and the physics of the switching phenomenaJournal of Non-Crystalline Solids, 1970
- Switching in elemental amorphous semiconductorsJournal of Non-Crystalline Solids, 1970