Auger recombination in low-band-gap n-type InGaAs
- 12 November 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (20) , 3272-3274
- https://doi.org/10.1063/1.1418032
Abstract
We measured the recombination lifetime of degenerate for three different compositions that correspond to 0.66, and 0.78 (band gaps of 0.74, 0.60, and 0.50 eV, respectively) over the doping range of The Auger recombination rate increases slowly with decreasing band gap, and it matches the behavior predicted for phonon-assisted recombination.
Keywords
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