Evolution of monolayer terrace topography during metalorganic chemical vapor deposition of (100) GaAs
- 30 August 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (9) , 1228-1230
- https://doi.org/10.1063/1.109780
Abstract
The evolution of surface topography during epitaxialgrowth of GaAs on (100) GaAs substrate is observed using angle‐resolved elasticlight scattering within a metalorganic chemical vapor deposition reactor. The temporal and orientation dependence of diffuse (nonspecular) optical scattering is determined at growth initiation, during steady state growth, and at growth conclusion. Phenomena such as persistent monolayer oscillations in surface roughness,nucleation delay, and [01̄1] step development are observed. The influence of substrate miscut, growth temperature, and rate is discussed.Keywords
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