Properties of a bulk semiconductor barrier with minority carrier injection
- 1 June 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (6) , 529-535
- https://doi.org/10.1016/0038-1101(82)90169-1
Abstract
No abstract availableKeywords
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- New rectifying semiconductor structure by molecular beam epitaxyApplied Physics Letters, 1980
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- Thin-MIS-Structure Si Negative-Resistance DiodeApplied Physics Letters, 1972