Optical functions of ion-implanted, laser-annealed heavily doped silicon
- 15 November 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (20) , 14607-14614
- https://doi.org/10.1103/physrevb.52.14607
Abstract
The optical functions of silcon heavily doped with Ge, P, As, and B are determined using spectroscopic ellipsometry measurements from 240 to 840 nm (5.16 to 1.47 eV). Below the direct band gap, there is a residual enhancement of the optical-adsorption coefficient for silicon heavily doped with n-type dopants, which cannot be explained by surface roughness. In the low-energy region of the observed spectrum, it is found that both free-carrier and strain effects alter the complex dielectric function.Keywords
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