Calculated and measured infrared reflectivity of diffused/implanted p-type silicon layers

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Abstract
Reflectivity spectra in the infrared are calculated for different profile parameters in the case of p-type dopants in silicon. The spectra are found to be sensitive to the surface concentration and the sheet resistivity. The calculations are based on extrapolated data of a preceding Kramers-Kronig analysis, the applicability of these data having been proved by comparison of the calculated and measured reflectivities of boron-diffused samples. It is pointed out that the lack of knowledge of the wavelength and concentration dependence of the optical constants presents the greatest difficulty in evaluating and calculating the reflectivity spectra of diffused and implanted samples.