Excess drain current in heterojunction FETs due to substrate space-charge-limited current
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (9) , 1591-1596
- https://doi.org/10.1109/16.34217
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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