Graded-emitter AlGaN/GaN heterojunction bipolartransistors
- 6 July 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (14) , 1239-1241
- https://doi.org/10.1049/el:20000887
Abstract
AlGaN/GaN heterojunction bipolar transistors (HBTs) with a graded emitter-base junction have been grown and fabricated. The epitaxial structures were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. The HBT devices with an emitter size of 60 × 60 µm2 exhibit well controlled current-voltage characteristics and Gummel plots and achieve a common-emitter current gain in the range β = 4 – 10 and a common-emitter offset voltage VCEoff = 4 V at room temperature.Keywords
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