A 77-GHz down-conversion mixer architecture with built-in test capability in SiGe technology
- 1 October 2010
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 77-GHz double-balanced mixer in a 200 GHz f t silicon-germanium technology is presented. The proposed mixer architecture is capable of simultaneous direct up- and down-conversion of two separate input signals without additional power consumption. An up-converted low-frequency test signal is coupled back into the receiver RF input path to enable a built-in functionality test of the down-conversion path of the mixer. The circuit exhibits a conversion gain of 20 dB and draws 22mA from a 3.3V supply. The fabricated chip occupies an area of 1028 × 1128μm 2 .Keywords
This publication has 10 references indexed in Scilit:
- Integrated Test for Silicon Front EndsIEEE Microwave Magazine, 2010
- A differential 77-GHz receiver with current re-use low-noise amplifier in SiGe technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- A 77-GHz FMCW radar transceiver sourced through a 19-GHz SiGe Colpitts oscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- High speeds in a single chipIEEE Microwave Magazine, 2009
- A fully differential low-power high-linearity 77-GHz SiGe receiver frontend for automotive radar systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- SiGe Receiver Front Ends for Millimeter-Wave Passive ImagingIEEE Transactions on Microwave Theory and Techniques, 2008
- Single-Chip W-band SiGe HBT Transceivers and Receivers for Doppler Radar and Millimeter-Wave ImagingIEEE Journal of Solid-State Circuits, 2008
- A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive RadarIEEE Journal of Solid-State Circuits, 2008
- A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar TechnologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- 3.3 ps SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005