Write/erase degradation in source side injection flash EEPROM's: characterization techniques and wearout mechanisms

This publication has 15 references indexed in Scilit:

• A 5 V-only virtual ground flash cell with an auxiliary gate for high density and high speed application
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications
  IEEE Transactions on Electron Devices, 1993
• Buried source-side injection (BSSI) for flash EPROM programming
  IEEE Electron Device Letters, 1992
• Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications
  IEEE Transactions on Electron Devices, 1992
• Degradation of tunnel-oxide floating-gate EEPROM devices and the correlation with high field-current-induced degradation of thin gate oxides
  IEEE Transactions on Electron Devices, 1989
• Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region
  IEEE Transactions on Electron Devices, 1987
• The impact of gate-induced drain leakage current on MOSFET scaling
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
• Correlating the Radiation Response of MOS Capacitors and Transistors
  IEEE Transactions on Nuclear Science, 1984
• Mosfet and MOS Capacitor Responses to Ionizing Radiation
  IEEE Transactions on Nuclear Science, 1984
• Hot-electron emission in n-channel IGFETs
  IEEE Journal of Solid-State Circuits, 1979