Growth rate enhancement using ozone during rapid thermal oxidation of silicon
- 25 July 1994
- journal article
- letter
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (4) , 412-414
- https://doi.org/10.1063/1.112318
Abstract
Rapid thermal oxidation of Si in a mixed oxygen and ozone ambient in the temperature range of 600–1200 °C is reported. Between 600 and 800 °C a large enhancement in oxidation is observed compared with conventional oxide growth in a pure oxygen ambient. For temperatures above 950 °C conventional thermal oxidation dominates and no significant enhancement is found.Keywords
This publication has 16 references indexed in Scilit:
- Ozone-induced rapid low temperature oxidation of siliconApplied Physics Letters, 1993
- Ozone oxidation of siliconElectronics Letters, 1993
- Silicon-fluorine bonding and fluorine profiling in SiO2 films grown by NF3-enhanced oxidationApplied Physics Letters, 1992
- Low temperature photo-assisted oxidation of siliconApplied Surface Science, 1992
- Growth characteristics of silicon dioxide produced by rapid thermal oxidation processesApplied Physics Letters, 1990
- Enhancement in Thermal Oxidation of Silicon by OzoneJournal of the Electrochemical Society, 1989
- Atomic oxygen and the thermal oxidation of siliconApplied Physics Letters, 1988
- Kinetics of the silicon dioxide growth process in afterglows of microwave-induced plasmasJournal of Applied Physics, 1987
- Chlorine Incorporation in HCl OxidesJournal of the Electrochemical Society, 1979
- The Effects of Trace Amounts of Water on the Thermal Oxidation of Silicon in OxygenJournal of the Electrochemical Society, 1974