Ozone-induced rapid low temperature oxidation of silicon
- 1 November 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (18) , 2517-2519
- https://doi.org/10.1063/1.110467
Abstract
We report the use of ozone enriched oxygen to induce rapid oxidation of silicon at temperatures up to 550 °C. The growth rates induced under these conditions were well over an order of magnitude larger than those achieved using pure dry oxygen. At 550 °C films up to 260 Å in thickness were grown 4 h producing a growth rate comparable to that for conventional oxidation at 850 °C.Keywords
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