The Microstructure and Electromigration Performance of Damascene-Fabricated Aluminum Interconnects
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Blanket and Local Crystallographic Texture Determination in Layered Al MetallizationMRS Proceedings, 1995
- The Role of Texture On The Reliability Of Aluminum Based InterconnectsMRS Proceedings, 1993
- Texture and Microstructure Effects on Electromigration Behavior of Aluminum MetallizationMRS Proceedings, 1991
- Grain Growth in Thin FilmsAnnual Review of Materials Science, 1990
- Embedded-atom-method functions for the fcc metals Cu, Ag, Au, Ni, Pd, Pt, and their alloysPhysical Review B, 1986
- Effect of texture and grain structure on electromigration in Al-0.5%Cu thin filmsThin Solid Films, 1981
- Linewidth dependence of electromigration in evaporated Al-0.5%CuApplied Physics Letters, 1980
- Electron back-scattering patterns—A new technique for obtaining crystallographic information in the scanning electron microscopePhilosophical Magazine, 1973
- Surface energy anisotropy by an improved thermal grooving techniquePhilosophical Magazine, 1969