Si-implanted InGaP/GaAs metal-semiconductor field-effect transistors

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Abstract
A new device structure for Si‐implanted GaAs metal‐semiconductor field‐effect transistors (MESFETs), with an InGaP thin film on the GaAs surface, is proposed. A 200 Å InGaP film passivated the GaAs surface and increased the Schottky barrier height on n‐type GaAs layers with a carrier concentration as high as 3×1018/cm3 to more than 0.6 eV. These effects persisted after annealing at 800 °C for 10 min. The transconductance of 2‐μm‐gate MESFETs remained above 150 mS/mm at gate voltages up to 1.0 V. Si‐implanted InGaP/GaAs MESFETs are thus promising devices for use in high‐speed and low‐noise integrated circuits.