Analysis of gate oxide shorts in CMOS circuits
- 1 December 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computers
- Vol. 42 (12) , 1510-1516
- https://doi.org/10.1109/12.260643
Abstract
The resistance dependence, voltage dependence, temperature dependence, and pattern dependence properties of CMOS logic gate operation in the presence of gate oxide shorts are analyzed. The analysis is based on realistic defect models that incorporate the resistive nature of gate oxide shorts and the difference between gate oxide shorts in n- and p-channel transistors.<>Keywords
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