Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction
- 7 April 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (14) , 2251-2253
- https://doi.org/10.1063/1.1565695
Abstract
We have investigated a series of samples containing SiGe islands capped at different growth temperatures. A layer of islands formed by deposition of 5 ML of pure Ge was capped with Si, deposited at temperatures of 460, 540, and 630 °C, respectively. The Ge composition profile and the shape of the buried islands are deduced from x-ray diffraction data. While for capping at high substrate temperatures a significant dilution of the Ge content and a flattening of the islands occur, capping at low temperatures maintains a high aspect ratio and a high Ge content of the islands. The maximum in-plane strain in the island remains as high as 0.005 for capping at low temperatures.Keywords
This publication has 13 references indexed in Scilit:
- Composition of self-assembled Ge/Si islands in single and multiple layersApplied Physics Letters, 2002
- Grazing-incidence small-angle scattering measurement of Ge islands capped with a Si layerApplied Physics Letters, 2002
- Shape-mediated anisotropic strain in self-assembledquantum dotsPhysical Review B, 2002
- Shape preservation of Ge/Si(001) islands during Si cappingApplied Physics Letters, 2002
- X-Ray Diffuse Scattering on Self-Organized Mesoscopic StructuresCrystal Research and Technology, 2002
- SiGe intermixing in Ge/Si(100) islandsApplied Physics Letters, 2001
- Effect of overgrowth temperature on the photoluminescence of Ge/Si islandsApplied Physics Letters, 2000
- Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor depositionApplied Physics Letters, 2000
- Grazing incidence small angle x-ray scattering from free-standing nanostructuresJournal of Applied Physics, 1999
- Embedding of Nanoscale 3D SiGe Islands in a Si MatrixPhysical Review Letters, 1998