Low-frequency noise behavior of γ-irradiated partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor transistors
- 20 September 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (12) , 1672-1674
- https://doi.org/10.1063/1.110733
Abstract
This letter discusses the low‐frequency noise behavior of partially depleted silicon‐on‐insulator n‐channel metal‐oxide‐semiconductor transistors after γ irradiation to a total dose of 100 krad(Si). The noise characteristics both in linear operation and in saturation are investigated in detail. It is shown that the increase of the noise in the linear region is mainly due to the degradation of the sidewall isolation regions. In contrast, the so‐called kink‐related noise overshoot is hardly affected by the irradiation, indicating that its origin is most likely not interface related. This result will be discussed in view of a recently proposed model for the noise overshoot.Keywords
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