Memory properties of Si+ implanted gate oxides: from MOS capacitors to nvSRAM
- 30 November 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (11) , 1729-1737
- https://doi.org/10.1016/s0038-1101(02)00142-9
Abstract
No abstract availableKeywords
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