Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures

This publication has 11 references indexed in Scilit:

• Write, erase and storage times in nanocrystal memories and the role of interface states
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices
  Journal of Crystal Growth, 2000
• Experimental and theoretical investigation of nonvolatile memory data-retention
  IEEE Transactions on Electron Devices, 1999
• Investigation of low field and high temperature SiO2 and ONO leakage currents using the floating gate technique
  Journal of Non-Crystalline Solids, 1999
• Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
  Japanese Journal of Applied Physics, 1999
• SiO2- and ONO-induced substrate current in silicon field-effect transistors
  Solid-State Electronics, 1998
• Fast and long retention-time nano-crystal memory
  IEEE Transactions on Electron Devices, 1996
• A silicon nanocrystals based memory
  Applied Physics Letters, 1996
• Visible photoluminescence related to Si precipitates in Si⁺-implanted SiO₂
  Journal of Physics: Condensed Matter, 1993
• High-field-induced degradation in ultra-thin SiO/sub 2/ films
  IEEE Transactions on Electron Devices, 1988