Reduction of Internal Loss and Threshold Current in a Laser Diode with a Ridge by Selective Re-Growth (RiS-LD)
- 1 August 2002
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 192 (2) , 329-334
- https://doi.org/10.1002/1521-396x(200208)192:2<329::aid-pssa329>3.0.co;2-a
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electroabsorption Spectroscopy ? Direct Determination of the Strong Piezoelectric Field in InGaN/GaN Heterostructure DiodesPhysica Status Solidi (a), 2001
- Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN SubstratesJapanese Journal of Applied Physics, 2001
- Novel RiS-type InGaN MQW laser diodes on FIELO GaN substratesPublished by SPIE-Intl Soc Optical Eng ,2001
- Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material SystemJapanese Journal of Applied Physics, 2001
- GaN-Based High Power Blue-Violet Laser DiodesJapanese Journal of Applied Physics, 2001
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN SubstratesJapanese Journal of Applied Physics, 2000
- Optical Recombination Processes in High-Quality GaN Films and InGaN Quantum Wells Grown on Facet-Initiated Epitaxial Lateral Overgrown GaN SubstratesJapanese Journal of Applied Physics, 2000
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse ModeJapanese Journal of Applied Physics, 1999
- Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-ContactJapanese Journal of Applied Physics, 1999
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997