Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films

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Abstract
Polysilicon thin films with extremely large grains (grain size more than 50 µm, i.e., three orders of magnitude more than the typical value) have been formed using an excimer-laser crystallization method for the first time. This drastic enlargement was achieved by the reduction of the solidification rate of molten silicon by the small heat capacitance effect of the thin silicon-dioxide membrane used as a substrate. Crystallinity and film properties have been evaluated from Raman spectroscopy, resistivity, Hall effect and transistor characteristics. The Hall mobility of electrons was as high as 610 cm2/Vs.