Observation of microdefects and microprecipitates in Si crystals by IR scattering tomography
- 1 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (3-4) , 482-490
- https://doi.org/10.1016/0022-0248(91)90225-t
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Characterization of Oxygen Precipitates in CZ-Silicon Crystals by Light-Scattering TomographyJapanese Journal of Applied Physics, 1990
- Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission MicroscopyMaterials Science Forum, 1989
- Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering TomographyJapanese Journal of Applied Physics, 1983
- Plate-like defects in a synthetic quartz crystalJournal of Crystal Growth, 1982
- Detection of plate-like defects by light-scattering tomographyPhilosophical Magazine A, 1981
- Observation of dislocations in a synthetic quartz crystal by light scattering tomographyPhilosophical Magazine A, 1980
- Growth and textures of ZnS crystalsJournal of Crystal Growth, 1972
- Diffraction contrast analysis of two-dimensional defects present in silicon after annealingPhilosophical Magazine, 1966
- Two-dimensional defects in silicon after annealing in wet oxygenPhilosophical Magazine, 1965
- Surface Damage and Copper Precipitation in SiliconPhysica Status Solidi (b), 1963