Microdefects distribution in Czochralski-grown silicon crystals
- 15 May 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (10) , 787-788
- https://doi.org/10.1063/1.92163
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Precipitation and redistribution of oxygen in Czochralski-grown siliconApplied Physics Letters, 1980
- Oxygen striation and thermally induced microdefects in Czochralski-grown silicon crystalsApplied Physics Letters, 1980
- Microdistribution of Oxygen in SiliconJournal of the Electrochemical Society, 1980
- Formation process of oxide precipitates in Czochralski-grown silicon crystalsApplied Physics Letters, 1980
- Determination of oxygen concentration profiles in silicon crystals observed by scanning IR absorption using semiconductor laserApplied Physics Letters, 1980
- Effect of Microscopic Growth Rate on Oxygen Microsegregation and Swirl Defect Distribution in Czochralski‐Grown SiliconJournal of the Electrochemical Society, 1979
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957