Microlithographic Assessment of a Novel Family of Transparent and Etch-Resistant Chemically Amplified 193-nm Resists Based on Cyclopolymers
- 9 October 2001
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 13 (11) , 4147-4153
- https://doi.org/10.1021/cm010431w
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Novel multi-alicyclic polymers for enhancing plasma etch resistance in 193 nm lithographyPolymer, 2001
- Poly(5-((2-trimethylsilyl-2-propyl)oxycarbonyl)-norbornene-co-maleic anhydride) for 193-nm lithographyPolymer, 2000
- Organic Materials Challenges for 193 nm ImagingAccounts of Chemical Research, 1999
- Improvement of Post-Exposure Delay Stability in Alicyclic ArF Excimer PhotoresistsJournal of Photopolymer Science and Technology, 1999
- Novel Organic Resists for Nanoscale Imaging. From Chemically Amplified Cycloaliphatic Resists to Dendrimer Monolayer.Journal of Photopolymer Science and Technology, 1999
- Alicyclic Polymers for 193 nm Resist Applications: Lithographic EvaluationChemistry of Materials, 1998
- Polymers for 193-nm Microlithography: Regioregular 2-Alkoxycarbonylnortricyclene Polymers by Controlled Cyclopolymerization of Bulky Ester Derivatives of NorbornadieneAngewandte Chemie International Edition in English, 1998
- A Novel Polymer for a 193-nm Resist.Journal of Photopolymer Science and Technology, 1996
- New procedures for selectively protected cholic acid derivatives. Regioselective protection of the 12α-OH group, and t-butyl esterification of the carboxyl groupJournal of the Chemical Society, Perkin Transactions 1, 1990
- A new preparation of triarylsulfonium and -selenonium salts via the copper(II)-catalyzed arylation of sulfides and selenides with diaryliodonium saltsThe Journal of Organic Chemistry, 1978