Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Structures
- 5 March 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 224 (1) , 93-96
- https://doi.org/10.1002/1521-3951(200103)224:1<93::aid-pssb93>3.0.co;2-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dotsApplied Physics Letters, 2000
- The present status of quantum dot lasersPhysica E: Low-dimensional Systems and Nanostructures, 1999
- Argon ion damage in self-assembled quantum dots structuresApplied Physics Letters, 1998
- Energy relaxation by multiphonon processes in InAs/GaAs quantum dotsPhysical Review B, 1997
- Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructuresPhysical Review B, 1995
- Reduced quantum efficiency of a near-surface quantum wellJournal of Applied Physics, 1993
- Defect- Impurity Interaction in Irradiated n-GaAsMRS Proceedings, 1992