Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs
- 16 August 2005
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 23 (5) , 1929-1935
- https://doi.org/10.1116/1.2013312
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrixJournal of Crystal Growth, 2003
- Recent advances in Schottky barrier conceptsMaterials Science and Engineering: R: Reports, 2001
- Schottky barrier formation at ErAs/GaAs interfaces: a case of Fermi level pinning by surface statesSolid State Communications, 1998
- Characteristics of a In/sub 0.52/(Al/sub x/Ga/sub 1-x/)/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As(0≤x≤1) heterojunction and its application on HEMT'sIEEE Transactions on Electron Devices, 1997
- Electronic structure of rare-earth pnictidesPhysical Review B, 1996
- Effect of orientation on the Schottky barrier height of thermodynamically stable epitaxial metal/GaAs structuresJournal of Vacuum Science & Technology A, 1992
- Magneto-transport in ultrathin ErAs epitaxial layers buried in GaAsSurface Science, 1990
- Epitaxial growth of ErAs on (100)GaAsApplied Physics Letters, 1988
- Physics of Schottky Barrier JunctionsPublished by Springer Nature ,1984
- Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAsJournal of Applied Physics, 1978