Generation of deep levels in silicon under posthydrogen-plasma thermal anneal
- 15 March 1995
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (6) , 2819-2821
- https://doi.org/10.1063/1.358691
Abstract
Si wafers subject to short‐time (4–12 min), low‐temperature atomic hydrogen cleaning in an electron‐cyclotron‐resonance plasma system have been annealed subsequently in the temperature range 300–750 °C for 20 min. While only a small broad peak is discernible immediately after hydrogenation, several pronounced and distinct majority‐carrier trap levels appear in deep‐level transient spectroscopy measurements of subsequently fabricated Schottky diodes on both n‐ and p‐type Si samples annealed at 450 °C and above. The concentrations peak at anneal temperatures around 500 °C and drop substantially beyond 750 °C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.This publication has 12 references indexed in Scilit:
- Silicon surface electrical properties after low-temperature in situ cleaning using an electron cyclotron resonance plasmaJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Necessity of hydrogen for activation of implanted fluorine in Si/SiO2 structuresApplied Physics Letters, 1993
- Investigation of room-temperature ion beam hydrogenation for the removal of traps in silicon ion beam damaged metal-oxide-silicon structuresJournal of Applied Physics, 1993
- Plasma cleaned Si analyzed in situ by x-ray photoelectron spectroscopy, secondary ion mass spectrometry, and actinometryJournal of Applied Physics, 1992
- Hydrogen in crystalline semiconductorsPhysica B: Condensed Matter, 1991
- I n s i t u measurements of hydrogen motion and bonding in siliconJournal of Applied Physics, 1990
- Hydrogen-accelerated thermal donor formation in Czochralski siliconApplied Physics Letters, 1990
- Enhanced thermal donor formation and oxygen diffusion in silicon exposed to a hydrogen plasmaMaterials Science and Engineering: B, 1989
- Effective removal of oxygen from Si layer on buried oxide by implantation of hydrogenJournal of Applied Physics, 1987
- Deep levels introduced into silicon during hydrogen plasma annealingJournal of Applied Physics, 1985