Preparation of YbBa2Cu3O7−x films on Si(100) substrates using SrTiO3 buffer layers
- 21 September 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (12) , 1459-1461
- https://doi.org/10.1063/1.107517
Abstract
We report that superconducting YbBa2Cu3O7−x films are formed on Si(100) substrates using SrTiO3 films as buffer layers. SrTiO3 buffer layers are prepared on Si using a focused electron beam evaporation method, while YbBa2Cu3O7−x films are prepared using a dc arc discharge evaporation method. It has been shown that the SrTiO3 thin film is effective to transmit the crystalline information of a Si(100) substrate to the YbBa2Cu3O7−x film and to block the diffusion of Si atoms into the film. The highest Tc (zero) of the film was 73 K.Keywords
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