Charge-collection mechanisms of heterostructure FETs
- 1 December 1994
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6) , 2055-2062
- https://doi.org/10.1109/23.340542
Abstract
Ion- and laser-induced charge-collection transients measured for AlGaAs-InGaAs hetero-insulated-gate field-effect transistors (HIGFETs) reveal evidence for two mechanisms of enhanced charge collection: a channel-modulation mechanism that dominates the charge-collection processes at positive gate biases and can persist for several nanoseconds; and a parasitic bipolar transistor mechanism that shows a sensitive dependence on the density of free carriers injected into the device, and is complete within a few hundred picoseconds. The results reinforce the utility of the laser technique for investigating the charge-collection mechanisms of semiconductor devices.Keywords
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