20 Gbit/s long wavelength monolithic integratedphotoreceiver grown on GaAs
- 27 March 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (7) , 624-626
- https://doi.org/10.1049/el:19970379
Abstract
The first 20 Gbit/s 1.3–1.55 µm wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using AlGaAs/GaAs HEMTs. At a wavelength of 1.3 µm, the integrated InGaAs MSM photodiode has a responsivity of 0.32 A/W and the photoreceiver has a –3 dB bandwidth of 16.5 GHz. Clearly-opened eye diagrams for a 20 Gbit/s 1.55 µm optical data stream have been demonstrated.Keywords
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