Optical investigation of stress in the central GaAs layer of molecular-beam-grown AlxGa1−xAs-GaAs-AlxGa1−xAs structures
- 1 October 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (10) , 4312-4315
- https://doi.org/10.1063/1.321453
Abstract
From the analysis of exciton splittings and shifts in the 2K absorption spectra of central GaAs layers in molecular‐beam‐grown AlxGa1−xAs‐GaAs‐AlxGa1−xAs structures, the magnitude and sign of the layer stress is deduced. Annealing at 850 °C has little influence on the layer stress although large changes in photoluminescence efficiency are observed. Comparisons with similar LPE‐grown structures and MBE‐grown double‐heterostructure lasers are made.This publication has 24 references indexed in Scilit:
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