On the relation between growth striations and resistivity variations in silicon crystals
- 16 March 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 22 (1) , 163-166
- https://doi.org/10.1002/pssa.2210220118
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Electrical measurement of resistivity fluctuations associated with striations in silicon crystalsIEEE Transactions on Electron Devices, 1973
- Zum einfluss von temperprozessen auf widerstandsschwankungen in siliziumeinkristallenSolid-State Electronics, 1972
- Microinhomogeneities in melt and vapor grown siliconJournal of Crystal Growth, 1971
- A New Striation Etch for SiliconJournal of the Electrochemical Society, 1970
- Observations on Imperfections in Silicon Material Using the Spreading Resistance ProbeJournal of the Electrochemical Society, 1970
- Methoden zur untersuchung inhomogener dotierstoff-verteilung in silicium-einkristallenSolid-State Electronics, 1969
- High precision lattice parameter measurements by multiple Bragg reflexion diffractometryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969
- Resistivity Inhomogeneities in Silicon CrystalsJournal of the Electrochemical Society, 1967
- Direct Observation of Imperfections in Semiconductor Crystals by Anomalous Transmission of X RaysJournal of Applied Physics, 1962
- LIQUID–SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHODCanadian Journal of Physics, 1960