Si nanowires synthesized from silicon monoxide by laser ablation
- 1 January 2001
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 19 (1) , 317-319
- https://doi.org/10.1116/1.1343103
Abstract
By ablating a silicon monoxide target with a pulsed KrF excimer laser at 1200 °C in an Ar atmosphere, we have achieved production of high-purity Si nanowires in bulk quantities. The yield and linear growth rate can reach 30 mg/h and 500 μm/h, respectively. Transmission electron micrographs show that the sample of silicon nanowires consists of few nanoparticles.Keywords
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