CdTe(111)B grown on Si(111) by molecular beam epitaxy

We demonstrate the growth of large-area, domain-free $\mathrm{CdTe(111)}B$ single crystals on As-passivated Si(111) substrates by molecular beam epitaxy using ZnTe buffer layers. The crystal quality of the $\mathrm{CdTe(111)}\mathrm{B/}\mathrm{ZnTe(111)}\mathrm{B/}\mathrm{Si(111)}$ films was examined by x-ray diffraction (56 arcs), etch-pit-density ${\text{(2×10}}^5 {\mathrm{cm}}^{\mathrm{-2}})$ analysis, and transmission electron microscopy, and was found to be comparable to or better than the best $\mathrm{CdTe(111)}B$ films grown directly on vicinal Si(001). Surface reconstructions were observed by reflection high-energy electron diffraction at different stages. Diffraction intensity oscillations demonstrated the layer-by-layer growth mode of the CdTe surface. An interface model for these films is proposed.