Stress relaxation in Si-doped GaN studied by Raman spectroscopy
- 1 June 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (11) , 5787-5791
- https://doi.org/10.1063/1.367501
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphireApplied Physics Letters, 1996
- Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- Doping of gallium nitride using disilaneJournal of Electronic Materials, 1995
- Thermal stress in GaN epitaxial layers grown on sapphire substratesJournal of Applied Physics, 1995
- Si-Doped InGaN Films Grown on GaN FilmsJapanese Journal of Applied Physics, 1993
- Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the StrainJapanese Journal of Applied Physics, 1992
- Si- and Ge-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPEJournal of Crystal Growth, 1991
- Electron beam effects on blue luminescence of zinc-doped GaNJournal of Luminescence, 1988