Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

2 December 2002

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 81 (23) , 4392-4394
https://doi.org/10.1063/1.1528726

Abstract

In this letter, we report the pulsed atomic-layer epitaxy of ultrahigh-quality AlN epilayers and AlN/Al0.85Ga0.15N multiple quantum wells (MQWs) on basal plane sapphire substrates. Symmetric and asymmetric x-ray diffraction (XRD) measurements and room-temperature (RT) photoluminescence (PL) were used to establish the ultrahigh structural and optical quality. Strong band-edge RT PL at 208 and 228 nm was obtained from the AlN epilayers and the AlN/Al0.85Ga0.15N MQWs. These data clearly establish their suitability for sub-250-nm deep UV emitters.

Keywords

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