Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth

This publication has 26 references indexed in Scilit:

• Growth process of III–V compound semiconductors by migration-enhanced epitaxy
  Journal of Crystal Growth, 1990
• In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
  Japanese Journal of Applied Physics, 1990
• Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAs
  Physical Review Letters, 1990
• Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy
  Japanese Journal of Applied Physics, 1989
• In Situ Laser Light Scattering: I . Detection of Defects Formed during Silicon Molecular Beam Epitaxy
  Journal of the Electrochemical Society, 1989
• Reflectance-Difference Spectroscopy: A New Look At Semiconductor Crystal Growth By MBE And OMCVD
  Published by SPIE-Intl Soc Optical Eng ,1989
• Surface properties probed by second-harmonic and sum-frequency generation
  Nature, 1989
• Optical second-harmonic generation as a surface probe for noncentrosymmetric media
  Optics Letters, 1988
• Nonlinear Optical Study of Si Epitaxy
  MRS Proceedings, 1986
• Monitoring Of Optical Thin Films During Deposition
  Published by SPIE-Intl Soc Optical Eng ,1983