Material properties of glow-discharge a-SiSn:H alloys

This publication has 15 references indexed in Scilit:

• Properties of amorphous silicon tin alloys produced using the radio frequency glow discharge technique
  Applied Physics Letters, 1984
• Space-charge-limited currents: Refinements in analysis and applications to a-Si1−xGex:H alloys
  Journal of Applied Physics, 1983
• Parts-per-million-phosphorus doping ofa−Si:H:Changes in carrier lifetime
  Physical Review B, 1983
• Properties and structure of a-SiC:H for high-efficiency a-Si solar cell
  Journal of Applied Physics, 1982
• Optical absorption, photoconductivity, and photoluminescence of glow-discharge amorphousSi1−xGexalloys
  Physical Review B, 1982
• Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
  Physical Review B, 1982
• Broadening of Spectral Response Width by a-Si/a-SiGe p-i-n type Solar Cells
  Japanese Journal of Applied Physics, 1981
• Electronic Properties of Amorphous Si_xGe_1−x:H Films
  Physica Status Solidi (b), 1980
• Photoconductivity and recombination in doped amorphous silicon
  Philosophical Magazine, 1977
• Electronic transport and state distribution in amorphous Si films
  Journal of Non-Crystalline Solids, 1972