New circuit model for RF probe pads and interconnections for the extraction of HBT equivalent circuits
- 1 October 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (10) , 521-523
- https://doi.org/10.1109/55.119176
Abstract
A new circuit model for RF probe pads and interconnections is proposed, and this model and previous models are compared with measured S parameters of probe pad and interconnection test structures. A modified parameter and interconnnection model was used to determine an HBT equivalent circuit. Excellent agreement is obtained between the extracted equivalent circuit and measured HBT S parameters, while providing physically acceptable parameter values.<>Keywords
This publication has 10 references indexed in Scilit:
- 2.5 W CW X-band heterojunction bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A parameter extraction technique for heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 12-40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A new direct method for determining the heterojunction bipolar transistor equivalent circuit modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Extraction of the parameters of equivalent circuits of microwave transistors using tree annealingIEEE Transactions on Microwave Theory and Techniques, 1990
- Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuitsIEEE Electron Device Letters, 1989
- Microwave performance of n-p-n and p-n-p AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Microwave Theory and Techniques, 1988
- High-frequency performance limitations of millimeter-wave heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1988
- Electron mobility in p-type GaAsApplied Physics Letters, 1988
- Measurement of the low-current base and emitter resistances of bipolar transistorsIEEE Transactions on Electron Devices, 1987