Allotaxial growth of epitaxial Si/FeSi2/Si heterostructures
- 1 November 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 73, 141-145
- https://doi.org/10.1016/0169-4332(93)90158-8
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Nature of the band gap of polycrystalline β-filmsPhysical Review B, 1992
- Permeable-base transistors with ion-implanted CoSi2 gateMaterials Science and Engineering: B, 1992
- Ion-beam synthesis of a Si/β-FeSi2/Si heterostructureApplied Physics Letters, 1991
- Electronic and vibrational properties of semiconducting crystalline FeSi2 layers grown on Si(111)Journal of Vacuum Science & Technology A, 1991
- Optical and electrical characterization of β-FeSi2 epitaxial thin films on silicon substratesJournal of Applied Physics, 1991
- The permeable base transistorPhysica Scripta, 1991
- Electronic structure of β-Physical Review B, 1990
- A b i n i t i o band-structure calculation of the semiconductor β-FeSi2Journal of Applied Physics, 1990
- A clarification of the index of refraction of beta-iron disilicideJournal of Applied Physics, 1988
- Realization and electrical properties of a monolithic metal-base transistor : The Si/CoSi2/Si structurePhysica B+C, 1985