Reflection high energy electron diffraction study on adatom desorption from ZnSe surface under electron beam irradiation and light irradiation
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 129-133
- https://doi.org/10.1016/0022-0248(92)90730-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Study on the behavior of surface adatoms during photoassisted MBE of ZnSe and improvement of surface morphologyJournal of Crystal Growth, 1991
- Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEEDJournal of Crystal Growth, 1991
- Photo-assisted MBE growth of ZnSe on GaAs substratesJournal of Crystal Growth, 1991
- Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1990
- Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp IrradiationJapanese Journal of Applied Physics, 1990
- Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameterJournal of Crystal Growth, 1990
- Surface Processes in ALE and MBE Growth of ZnSe: Correlation of RHEED Intensity Variation with Surface CoverageJapanese Journal of Applied Physics, 1989
- Reflection high-energy electron diffraction electron-stimulated desorption from ZnSe(100)(2×1)-Se surfacesJournal of Applied Physics, 1989
- MBE growth of high quality lattice-matched ZnSxSe1-x on GaAs substratesJournal of Crystal Growth, 1988
- Intensity variations of reflection high-energy electron diffraction during atomic layer epitaxial growth and sublimation of Zn chalcogenidesJournal of Crystal Growth, 1987