Pulsed Raman Measurements of Phonon Populations: Time Reversal, Correction Factors, and All That

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Abstract
Transient optic phonon populations are measured in crystalline Si as a function of 532 nm laser energy density. The use of a continuously tunable pulsed dye laser as the Raman probe allows us to obtain, under exact experimental conditions, all correction factors necessary to extract the phonon population without the necessity of relying on room temperature or oven-heated conditions. We find the shift of the 520 cm−1 Raman-line to be consistent with the observed Stokes/anti-Stokes ratios indicating a maximum optic phonon temperature of 450 ± 100°C. A discussion is also given of the errors in several recent criticisms of the Raman results.