Al-Induced Crystallization of an Amorphous Si Thin Film in a Polycrystalline Al/Native SiO2/Amorphous Si Structure
- 1 April 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (4R)
- https://doi.org/10.1143/jjap.35.2052
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Structural characteristics of as-deposited and crystallized mixed-phase silicon filmsJournal of Electronic Materials, 1994
- Crystallization of silicon in aluminium/amorphous-silicon multilayersPhilosophical Magazine Part B, 1992
- Induced crystallization of amorphous silicon film in contact with aluminiumThin Solid Films, 1992
- Thermodynamic investigations of solid-state Si-metal interactions. II. General analysis of Si-metal binary systemsJournal of Applied Physics, 1990
- Initial formation process of metal/silicon interfacesSurface Science, 1986
- Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2Journal of Applied Physics, 1985
- Low temperature reactions at Si/metal interfaces; What is going on at the interfaces?Surface Science Reports, 1983
- Enhanced low temperature diffusion of electron-beam evaporated aluminium into SiO 2 thin filmsElectronics Letters, 1982
- Selective growth of metal-rich silicide of near-noble metalsApplied Physics Letters, 1975
- Metal contact induced crystallization in films of amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1972