The effect of an interfacial oxide layer on the Schottky barrier height of Er-Si contact
- 1 August 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (3) , 1330-1334
- https://doi.org/10.1063/1.336102
Abstract
We have studied the Er and ErSi2 contacts on p‐Si. A correlation is found between the barrier height and the presence of an interfacial oxide layer. Samples with a thin interfacial oxide (∼ 3 Å) exhibit a barrier height of 0.68 eV. In contrast, samples without any detectable interfacial oxide show a higher barrier height of ∼0.8 eV. The barrier heights were determined by current‐voltage measurements and the thicknesses of the interfacial oxide were measured by the 16O(d,α)14 N nuclear reaction technique.This publication has 15 references indexed in Scilit:
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