Phonon scattering by 3d impurities in III-V semiconductors: evidence of a low-spin ground state for V2+in GaAs?
- 20 February 1989
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (7) , 1191-1203
- https://doi.org/10.1088/0953-8984/1/7/003
Abstract
Phonon scattering by 3d impurities in GaAs, GaP and InP has been investigated by measuring the thermal conductivity between 50 mK and 100 K. Seven of the systems studied conform to the expectation that orbital triplets should scatter more strongly than doublets. It seemed likely that this should also be the case for isolated V2+ in GaAs but in fact only weak scattering is observed at high frequencies ( nu 0>100 GHz). This is interpreted as evidence that V2+ in GaAs has a low-spin configuration leading to a doublet ground state, 2E. Two strong phonon resonances are observed at low frequencies, approximately=6 and approximately=20 GHz. These are sensitive to sub-band-gap illumination and are assigned to a centre previously seen by TDEPR and APR and attributed to a V2+ complex.Keywords
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